to-220f plastic-encapsulate mosfets CJPF03N80 n-channel power mosfet general description the CJPF03N80 provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. feature z excellent package for good heat dissipation z ultra low gate charge z low reverse transfer capacitance z fast switching capability z avalanche energy specified application z power switching application maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 800 gate-source voltage v gs 30 v continuous drain current i d 3 pulsed drain current i dm 10 a single pulsed avalanche energy (note1) e as 170 mj thermal resistance from junction to ambient r ja 62.5 /w junction temperature t j 150 storage temperature range t stg -55 ~+150 maximum lead temperature for soldering purposes , 1/8?from case for 5 seconds t l 260 to-220f 1. gate 2. drain 3. source 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a-2,dec,2013
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit off characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 800 v zero gate voltage drain current i dss v ds =800v, v gs =0v 1 a gate-body leakage current i gss v ds =0v, v gs = 30v 10 a on characteristics (note2) gate-threshold voltage v gs(th) v ds =v gs , i d =250a 3 4.5 v static drain-source on-resistance r ds(on) v gs =10v, i d =1.5a 4.2 ? forward transconductance g fs v ds =15v, i d =1.5a 2.1 s dynamic characteristics (note 3) input capacitance c iss 485 output capacitance c oss 57 reverse transfer capacitance c rss v ds =25v,v gs =0v,f =1mhz 11 pf switching characteristics (note 2,3) turn-on delay time t d (on) 17 turn-on rise time t r 27 turn-off delay time t d(off) 36 turn-off fall time t f v dd =400v, r g =4.7 ? , i d =3a, v gs =10v 40 ns total gate charge q g 19 nc gate-source charge q gs 3.2 nc gate-drain charge q gd v ds =640v,v gs =10v,i d =3a 10.8 nc drain-source diode characteristics drain-source diode forward voltage v sd v gs = 0v, i s =3a 1.6 v continuous drain-source diode forward current i s 3 a pulsed drain-source diode forward current i sm 10 a notes : 1. i l =3a, v dd =50v, r g =25 ? ,starting t j =25 . 2. pulse test : pulse width 300s, duty cycle 2%. 3. guaranteed by design, not subject to production 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a-2,dec,2013
012345678 0.0 0.5 1.0 25 50 75 100 125 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 200 400 600 800 1000 1e-3 0.01 0.1 1 246810 0 3 6 9 12 15 18 0.5 1.0 1.5 2.0 2.5 3.0 1 2 3 4 5 6 0 5 10 15 20 25 30 0 1 2 3 4 v ds =10v pulsed drain current i d (a) gate to source voltage v gs (v) transfer characteristics t a =100 t a =25 i d =250ua threshold voltage threshold voltage v th (v) junction temperature t j ( ) 3 pulsed source current i s (a) source to drain voltage v sd (mv) v sd i s ?? t a =100 t a =25 pulsed i d =1.5a r ds(on) ?? v gs on-resistance r ds(on) ( ) gate to source voltage v gs (v) t a =100 t a =25 t a =25 pulsed on-resistance r ds(on) ( ) drain current i d (a) i d ?? r ds(on) v gs =10v pulsed CJPF03N80 v gs =4.5v output characteristics drain current i d (a) drain to source voltage v ds (v) v gs = 6v 8v 10v v gs =5v 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a-2,dec,2013
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